Effect of a Highly Metallic Surface State on the Magneto-Transport Properties of Single Crystal Bi Films  

作　　者：YIN Shu-Li LIANG Xue-Jin ZHAO Hong-Wu 尹树力;梁学锦;赵宏武(Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190)

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190

出　　处：《Chinese Physics Letters》2013年第8期164-168,共5页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2009CB930803;the National Natural Science Foundation of China under Grant No 10834012;the Knowledge Innovation Project of the Chinese Academy of Sciences under Grant No KJCX2-YW-W24.

摘　　要：The magneto-transport properties of thin single crystal Bi films epitaxial grown on Si(111)-7×7 surfaces are investigated systematically as functions of film thickness(5–55 nm)and temperature.Under a perpendicular magnetic field,the positive magnetoresistance(PMR)effect is normally found,and its curve shapes are evolved systematically with film thickness.In contrast,under parallel magnetic fields the PMR effect observed for thinner Bi films develops into the negative magnetoresistance effect with the increasing magnetic field for the thicker Bi film.Our analysis indicates that there exists strong competition between the weak anti-localization effect in the surface states and the weak-localization effect in the bulk states of the Bi film,which induces the anomalous changes in the parallel magneto-resistance curves.The temperature-dependent experiments further demonstrate that the surface state plays an important role in the magneto-transport process of Bi films.

关 键 词：temperature FILM FILM 

分 类 号：O48[理学—固体物理]