A Silicon Tunnel Field-Effect Transistor with an In Situ Doped Single Crystalline Ge Source for Achieving Sub-60 mV/decade Subthreshold Swing  

作　　者：LIU Yan WANG Hong-Juan YAN Jing HAN Gen-Quan 刘艳;王洪娟;颜静;韩根全(Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044)

机构地区：[1]Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China,College of Optoelectronic Engineering,Chongqing University,Chongqing 400044

出　　处：《Chinese Physics Letters》2013年第8期209-211,共3页中国物理快报（英文版）

基　　金：Supported by the Fundamental Research Funds for the Central Universities under Grant No 10611201312015.

摘　　要：We report the demonstration of an n-channel lateral Si tunnel field-effect transistor(TFET)with a single crystalline Ge source fabricated using the gate-last process.The p Ge source was in situ doped and grown at 320℃.An abrupt interface between Ge source and Si channel with type-II band alignment and a steep source doping profile(~1.5 nm/decade)formed the tunneling junction.This allows the realization of a TFET with a steep subthreshold swing of 49 mV/decade at room temperature and an ION/IOFF ratio of 107.

关 键 词：channel TUNNEL REALIZATION 

分 类 号：TN3[电子电信—物理电子学]