A High Figure-of-Merit SOI MOSFET with a Double-Sided Charge Oxide-Trench  

作　　者：FAN Yuan-Hang LUO Xiao-Rong WANG Pei ZHOU Kun ZHANG Bo LI Zhao-Ji 范远航;罗小蓉;王沛;周坤;张波;李肇基(State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054)

机构地区：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054

出　　处：《Chinese Physics Letters》2013年第8期212-215,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 61176069;the Program for New Century Excellent Talents in University of Ministry of Education of China(NCET-11-0062).

摘　　要：A novel silicon-on-insulator(SOI)metal-oxide-semiconductor field effect transistor(MOSFET)with a high figure of merit(FOM)is proposed.The device features a double-sided charge oxide-trench(DCT)and a trench gate extended to the buried oxide.First,the oxide trench causes multiple-dimensional depletion in the drift region,which not only improves the electric field(E-field)strength,but also enhances the reduced surface field effect.Second,self-adaptive charges are collected in the DCT,which enhances the E-field strength of the trench oxide.Third,the oxide trench folds the drift region along the vertical direction,reducing the device cell pitch.Fourth,one side of the DCT regions acts as the body contact of p-well to reduce cell pitch and specific on-resistance(R_(on,sp))further.Compared with a trench gate lateral double-diffused MOSFET,the DCT MOSFET increases the breakdown voltage(BV)from 53 V to 158 V at the same cell pitch of 3.5μm,or reduces the cell pitch by 60%and Ron,sp by 70%at the same BV.The FOM(FOM=BV^(2)/Ron,sp)of the proposed structure is 23 MW/cm^(2).

关 键 词：TRENCH BREAKDOWN FIGURE 

分 类 号：TN3[电子电信—物理电子学]