Anisotropic Diffusion Evolution of Vacancies Created by Oxygen Etching on a Si Surface  

作　　者：WANG Shu-Hua CAI Qun 王淑华;蔡群(State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433;College of Sciences,Shanghai Institute of Technology,Shanghai 200233)

机构地区：[1]State Key Laboratory of Surface Physics and Department of Physics,Fudan University,Shanghai 200433 [2]College of Sciences,Shanghai Institute of Technology,Shanghai 200233

出　　处：《Chinese Physics Letters》2011年第7期239-241,共3页中国物理快报（英文版）

基　　金：by the Natural Science Foundation of Shanghai Science and Technology Committee under Grant No 08ZR1401700.

摘　　要：We report the diffusion behavior of dimer vacancies on a Si(100)-(2×1)surface by using ultrahigh−vacuum scanning tunneling microscopy.The dimer vacancies are created by oxygen etching of Si atoms at elevated temperatures.By annealing the sample at 600–750°C,the dimer vacancies uniformly distribute on the terrace nucleate to form larger elongated voids of one atomic layer deep.The long axis of these voids is parallel to the Si dimer rows.During annealing,the surface morphology evolves in a way dominantly caused by the anisotropic diffusion of the dimer vacancies.A difference of diffusion barriers of 0.17±0.09 eV is obtained between the[110]and[110]directions.

关 键 词：DIFFUSION ANNEALING OXYGEN 

分 类 号：TG1[金属学及工艺—金属学]