Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer  

作　　者：PAN Feng QIAN Xian-Rui HUANG Li-Zhen WANG Hai-Bo YAN Dong-Hang 潘峰;钱先锐;黄丽珍;王海波;闫东航(State Key Laboratory of Polymer Chemistry and Physics,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130022;Graduate School of Chinese Academy of Sciences,Beijing 100039)

机构地区：[1]State Key Laboratory of Polymer Chemistry and Physics,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences,Changchun 130022 [2]Graduate School of Chinese Academy of Sciences,Beijing 100039

出　　处：《Chinese Physics Letters》2011年第7期323-326,共4页中国物理快报（英文版）

基　　金：by the National Natural Science Foundation of China(50803063);The National Basic Research Program of China(2009CB939702).

摘　　要：High-mobility vanadyl phthalocyanine(VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene(F2-P4T)thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine(F16CuPc)/copper phthalocyanine(CuPc)heterojunction unit,which are fabricated at different substrate temperatures,as a buffer layer.The highest mobility of 4.08 cm^(2)/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature.Compared with the random small grain-like morphology of the room-temperature buffer layer,the high-temperature organic heterojunction presents a large-sized fiber-like film morphology,resulting in an enhanced conductivity.Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.

关 键 词：HETEROJUNCTION temperature MOBILITY 

分 类 号：TN3[电子电信—物理电子学]