Large-area(64 × 64 array) inkjet-printed high-performance metal oxide bilayer heterojunction thin film transistors and n-metal-oxide-semiconductor(NMOS) inverters  

作　　者：Shuangshuang Shao Kun Liang Xinxing Li Jinfeng Zhang Chuan Liu Zheng Cui Jianwen Zhao 

机构地区：[1]Printable Electronics Research Center,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou,215123,China [2]School of Engineering,Westlake University,Hangzhou,310024,China [3]Zhejiang University,Hangzhou,310027,China [4]The Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology,School of Electronics and Information Technology,Sun Yat-sen University,Guangzhou,510275,China

出　　处：《Journal of Materials Science & Technology》2021年第22期26-35,共10页材料科学技术（英文版）

基　　金：This work was financially supported by the National Key R&D Program of“Strategic Advanced Electronic Materials”(No.2016YFB04011100);the Basic Research Program of Jiangsu Province(Nos.BK20161263,SBK2017041510);the Science and Technology Program of Guangdong Province(Nos.2016B090906002,2019B010924002);the Basic Research Program of Suzhou Institute of Nanotech and Nano-bionics(No.Y5AAY21001);the National Natural Science Foundation of China(Nos.61750110517,61805166);the Cooperation Project of Vacuum Interconnect Nano X Research Facility(NANO-X)of Suzhou Nanotechnology and Nano-Bionics Institute(H060)。

摘　　要：It is a big challenge to construct large-scale,high-resolution and high-performance inkjet-printed metal oxide thin film transistor(TFT)arrays with independent gates for the new printed displays.Here,a self-confined inkjet printing technology has been developed to construct large-area(64×64 array),high-resolution and high-performance metal oxide bilayer(In_(2)O_(3)/IGZO)heterojunction TFTs with independent bottom gates on transparent glass substrates.Inkjet printing In_(2)O_(3) dot arrays with the diameters from 55 to 70μm and the thickness of~10 nm were firstly deposited on UV/ozone treated AlO_(x) dielectric layers,and then IGZO dots were selectively printed on the top of In_(2)O_(3) dots by self-confined technology to form In_(2)O_(3)/IGZO heterojunction channels.When the inkjet-printed IO layers treated by UV/ozone for more than 30 min or oxygen plasma for 5 min prior to print IGZO thin films,the mobility of the resulting printed In_(2)O_(3)/IGZO heterojunction TFTs are correspondingly enhanced to be 18.80 and 28.44 cm^(2) V^(-1) s^(-1) with excellent on/off ratios(>10^(8))and negligible hysteresis.Furthermore,the printed N-Metal-Oxide-Semiconductor(NMOS)inverter consisted of an In_(2)O_(3)/IGZO TFT and an IGZO TFT has been demonstrated,which show excellent performance with the voltage gain up to 112.The strategy demonstrated here can be considered as general approaches to realize a new generation of high-performance printed logic gates,circuits and display driving circuits.

关 键 词：Inkjet printing Heterojunction channel 64×64 arrays High mobility NMOS inverter 

分 类 号：TN321.5[电子电信—物理电子学]