Analysis of Step Etching on SrTiO_(3) Substrates for the Step-Edge YBCO Josephson Junctions  

作　　者：CHEN Geng-Hua WANG Jing ZHAO Shi-Ping HAN Bing XU Feng-Zhi YANG Qian-Sheng 陈赓华;王晶;赵士平;韩冰;徐凤枝;杨乾声(Institute of Physics and Center for Condensed Matter Physics,Chinese Academy of Sciences,Beijing 100080)

机构地区：[1]Institute of Physics and Center for Condensed Matter Physics,Chinese Academy of Sciences,Beijing 100080

出　　处：《Chinese Physics Letters》2001年第1期106-108,共3页中国物理快报（英文版）

基　　金：Supported by the National Center for R&D on Superconductivity and the Ministry of Science and Technology of China(NKBRSF-G19990646).

摘　　要：A way to determine some important etching parameters in the step fabrication for highTc step-edge Josephson junctions is described based on an analysis of the dynamics of the etching process.The optimum thickness of the etch mask is defined with negligible recession of the mask edge during the etch.Under this condition,the equilibrium angle of the steps etched on the SrTiO_(3)(STO)substrate with an Nb mask has been calculated to be about 76°.With optimized mask thickness,its sharp sidewall and straight edge,high-quality steps on STO substrates with step height from 200-300 nm and step angle above 70°are made.Josephson junctions and dc-SQUIDs with high reproducibility and less parameter scatter are obtained on the step substrates.

关 键 词：process. JOSEPHSON STEPS 

分 类 号：O51[理学—低温物理]