Photoresponse Properties of an n-ZnS/p-Si Heterojunction  

作　　者：HUANG Jian WANG Lin-Jun TANG Ke XU Run ZHANG Ji-Jun LU Xiong-Gang XIA Yi-Ben 黄健;王林军;唐可;徐闰;张继军;鲁雄刚;夏义本(School of Materials Science and Engineering,Shanghai University,Shanghai 200072)

机构地区：[1]School of Materials Science and Engineering,Shanghai University,Shanghai 200072

出　　处：《Chinese Physics Letters》2011年第12期239-241,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60877017,61176072 and 11074162;the Shanghai Postdoctoral Sustentation Fund(11R21413300);the Program for Changjiang Scholars and Innovative Research Team in University(No IRT0739);Shanghai Leading Academic Disciplines(S30107).

摘　　要：An n-ZnS/p-Si heterojunction was fabricated by using the rf magnetron sputtering method. The band gap of the ZnS film is about 3.63 eV. Current-voltage (I–V) characteristics of the ZnS/Si heterojunction are examined and the results show the distinct rectifying characteristics with a turn-on voltage of about 1.8 V. The UV (330 nm) and visible (450 nm) photoresponse properties of the heterojunction are also investigated, which demonstrates the potential of such an n-ZnS/p-Si heterojunction for detecting both UV and visible light.

关 键 词：HETEROJUNCTION VISIBLE CHARACTERISTICS 

分 类 号：TN3[电子电信—物理电子学]