Surface Potential Equation for Metal-Oxide-Semiconductor Capacitors Considering the Degenerate Effect  

作　　者：ZHANG Da SUN Jiu-Xun PU Jin-Rong 张达;孙久勋;蒲金荣(Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054)

机构地区：[1]Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054

出　　处：《Chinese Physics Letters》2011年第12期245-248,共4页中国物理快报（英文版）

基　　金：Supported by the Program for Excellent Talents of Sichuan Province under Grant No 2011JQ0053;the Program for New Century Excellent Talents in University of China under Grant No NCET-05-0799;the Program for Excellent Talents of UESTC under Grant No 23601008.

摘　　要：A surface potential equation (SPE) considering the degenerate effect is derived. To make the degenerate SPE analysis, an empirical approximation for the Fermi integral is applied in the derivation. Dependences of surface potential and square of electric field on gate voltage calculated from the degenerate and non-degenerate models are compared with great discrepancy. Further, theoretical C–V relationships are compared with the experimental data for two structures and it is shown that the degenerate SPE−based Cg–Vg matches with the experimental data much better than the non-degenerate one, which confirms that the degenerate effect is inevitable for surface potential-based metal-oxide-semiconductor device modeling.

关 键 词：DEGENERATE potential DERIVATION 

分 类 号：O17[理学—数学]