Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers  

作　　者：LV Wen-Bin WANG Lai WANG Jia-Xing HAO Zhi-Biao LUO Yi 吕文彬;汪莱;王嘉星;郝智彪;罗毅(State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology,Department of Electronic Engineering,Tsinghua University,Beijing 100084)

机构地区：[1]State Key Laboratory on Integrated Optoelectronics/Tsinghua National Laboratory for Information Science and Technology,Department of Electronic Engineering,Tsinghua University,Beijing 100084

出　　处：《Chinese Physics Letters》2011年第12期271-273,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB301902,and 2011CB301903;the National High-Technology Research and Development Program of China under Grant Nos 2011AA03A112,2011AA03A106 and 2011AA03A105;the National Natural Science Foundation of China under Grant Nos 60723002,50706022,60977022 and 51002085;Beijing Natural Science Foundation under Grant No 4091001.

摘　　要：Single and dual layers of InGaN quantum dots(QDs)are grown by metal organic chemical vapor deposition.In the former,the density,average height and diameter of QDs are 1.3×10^(9) cm^(−2),0.93 nm and 65.1 nm,respectively.The latter is grown under the same conditions and possesses a 20 nm low-temperature grown GaN barrier between two layers.The density,average height and diameter of QDs in the upper layer are 2.6×10^(10) cm^(−2),4.6 nm and 81.3 nm,respectively.Two reasons are proposed to explain the QD density increase in the upper layer.First,the strain accumulation in the upper layer is higher,leading to a stronger three-dimensional growth.Second,the GaN barrier beneath the upper layer is so rough it induces growth QDs.

关 键 词：deposition Quantum BARRIER 

分 类 号：TN3[电子电信—物理电子学]