Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO_(2) Multilayers at Room Temperature  

作　　者：SUN Hong-Cheng XU Jun LIU Yu MU Wei-Wei XU Wei LI Wei CHEN Kun-Ji 孙红程;徐骏;刘宇;沐维维;徐伟;李伟;陈坤基(Nanjing National Laboratory of Microstructures,Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093)

机构地区：[1]Nanjing National Laboratory of Microstructures,Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2011年第6期291-294,共4页中国物理快报（英文版）

基　　金：by the National Basic Research Program of China under Grant No 2007CB613401;the National Natural Sci-ence Foundation of China under Grant Nos 61036001 and 10874070;the Natural Science Foundation of Jiangsu Province(BK2010010).

摘　　要：Phosphorous-doped hydrogenated amorphous Si/SiO2 multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system.The microstructural and luminescence properties of the samples are characterized after annealing at various temperatures.Under the onset crystallization temperature 800–900℃,a strong subband infrared light emission in the range 1.1–1.8μm is observed at room temperature instead of the usually observed visible light emission.This subband infrared emission is gradually enhanced with the increase of phosphorus doping concentration,which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms.

关 键 词：ANNEALING CRYSTALLIZATION AMORPHOUS 

分 类 号：TG1[金属学及工艺—金属学]