Efficiency-enhanced AlGaInP Light-Emitting Diodes with Thin Window Layers and Coupled Distributed Bragg Reflectors  

作　　者：CHEN Yi-Xin SHEN Guang-Di ZHU Yan-Xu GUO Wei-Ling LI Jian-Jun 陈依新;沈光地;朱彦旭;郭伟玲;李建军(Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100124)

机构地区：[1]Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100124

出　　处：《Chinese Physics Letters》2011年第6期305-307,共3页中国物理快报（英文版）

基　　金：by the National High-Technology Research and Development Program of China under Grant No 2006AA03A121;the National Basic Research Program of China under Grant No 2006CB604902.

摘　　要：A new structure of high-brightness light-emitting diodes(LED)is experimentally demonstrated.The thin window layer is composed of a 300-nm-thick indium-tin-oxide layer and a 500-nm-thick GaP layer for both current spreading and light anti-reflection.The two coupled distributed Bragg reflectors(DBRs)with one for reflecting normal incidence light and the other for reflecting inclined incidence light which is emitted to the GaAs substrate are employed in the LED fabrication.The coupled DBRs in the LED can provide high reflectivity with wide-angle reflection.The efficiency-enhanced AlGaInP LED has the luminance intensity increase of more than 50%compared with conventional LEDs and high reliability with the saturation current 130 mA.

关 键 词：EFFICIENCY THICK REFLECTIVITY 

分 类 号：TN3[电子电信—物理电子学]