Improving the Quality of the Deteriorated Regions of Multicrystalline Silicon Ingots during General Solar Cell Processes  

作　　者：WU Shan-Shan WANG Lei YANG De-Ren 吴珊珊;汪雷;杨德仁(State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027)

机构地区：[1]State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027

出　　处：《Chinese Physics Letters》2011年第4期163-166,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China(973 Program)(No 2007CB613403);the Innovation Team Project of Zhejiang Province(2009R50005);the Fundamental Research Funds for the Central Universities,and Project of Science and Technology Department of Jiangxi Province.

摘　　要：The behavior of wafers and solar cells from the border of a multicrystalline silicon(mc-Si)ingot,which contain deteriorated regions,is investigated.It is found that the diffusion length distribution of minority carriers in the cells is uniform,and high efficiency of the solar cells(about 16%)is achieved.It is considered that the quality of the deteriorated regions could be improved to be similar to that of adjacent regions.Moreover,it is indicated that during general solar cell fabrication,phosphorus gettering and hydrogen passivation could significantly improve the quality of deteriorated regions,while aluminum gettering by RTP could not.Therefore,it is suggested that the border of a me-Si ingot could be used to fabricate high efficiency solar cells,which will increase me-Si utilization effectively.

关 键 词：CRYSTALLINE RTP SOLAR 

分 类 号：TN3[电子电信—物理电子学]