Spectral Resolution Effects on the Lineshape of Photoreflectance  

作　　者：MA Li-Li SHAO Jun LÜXiang GUO Shao-Ling LU Wei 马丽丽;邵军;吕翔;郭少令;陆卫(National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083)

机构地区：[1]National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083

出　　处：《Chinese Physics Letters》2011年第4期205-208,共4页中国物理快报（英文版）

基　　金：Supported by the Science and Technology Commission of Shanghai Municipality(STCSM)under Grant Nos 09JC1415600 and 10QA1407800;and the National Natural Science Foundation of China under Grant No 10927404.

摘　　要：Spectral resolution effects on the lineshape of photoreflectance(PR)spectroscopy is experimentally investigated.PR measurements are performed on HgCdTe epilayer and InAs/GaAs quantum dot(QD)low-dimensional samples at low temperatures in a spectral resolution range from 8 to 0.5meV.The results indicate that the resolution affects not only the identification of narrow PR features,but also the determination of critical-point energies of identified PR features,and a spectral resolution of as high as 0.5meV may be necessary for low-dimensional semiconductors.The spectral resolution is indeed a crucial parameter,for which the step-scan Fourier transform infrared spectrometer-based PR technique is preferable.

关 键 词：reflectance RESOLUTION SPECTRAL 

分 类 号：TN2[电子电信—物理电子学]