Photocatalysis of InGaN Nanodots Responsive to Visible Light  

作　　者：WANG Lai ZHAO Wei HAO Zhi-Biao LUO Yi 汪莱;赵维;郝智彪;罗毅(Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084)

机构地区：[1]Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics,Department of Electronic Engineering,Tsinghua University,Beijing 100084

出　　处：《Chinese Physics Letters》2011年第5期214-217,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2011CB301902 and 2011CB301903;the National High Technology Research and Development Program of China under Grant Nos 2007AA05Z429 and 2008AA03A194;the National Natural Science Foundation of China under Grant Nos 60723002,50706022,60977022 and 51002085;Beijing Natural Science Foundation(No 4091001);the Industry,Academia and Research Combining and Public Science and Technology Special Program of Shenzhen(No 08CXY-14).

摘　　要：Photocatalysis of InGaN nanodots grown on GaN/sapphire templates by metal organic vapor phase epitaxy is studied.Photodegradation of methylene orange by InGaN nanodots responsive to visible light is observed.Analysis through atomic force microscopy and time-resolved photoluminescence measurements show that wider bandgap of InGaN,larger specific surface area and more proportion of photocarriers diffusing to the surface before recombination are propitious to photodegradation.

关 键 词：SAPPHIRE DOTS Photo 

分 类 号：TN3[电子电信—物理电子学]