Generation of Nitrogen-Vacancy Centers in Diamond with Ion Implantation  

作　　者：CUI Jin-Ming CHEN Xiang-Dong FAN Le-Le GONG Zhao-Jun ZOU Chong-Wen SUN Fang-Wen HAN Zheng-Fu GUO Guang-Can 崔金明;陈向东;樊乐乐;贡赵军;邹崇文;孙方稳;韩正甫;郭光灿(Key Lab of Quantum Information,University of Science and Technology of China,Hefei 230026;National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 23002)

机构地区：[1]Key Lab of Quantum Information,University of Science and Technology of China,Hefei 230026 [2]National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 23002

出　　处：《Chinese Physics Letters》2012年第3期157-160,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2011CB921200;the National Natural Science Foundation of China under Grant No 11004184;the Knowledge Innovation Project of the Chinese Academy of Sciences(CAS);the Fundamental Research Funds for the Central Universities.

摘　　要：Nitrogen-vacancy defect color centers are created in a high purity single crystal diamond by nitrogen-ion implantation.Both optical spectrum and optically detected magnetic resonance are measured for these artificial quantum emitters.Moreover,with a suitable mask,a lattice composed of nitrogen-vacancy centers is fabricated.Rabi oscillation driven by micro-waves is carried out to show the quality of the ion implantation and potential in quantum manipulation.Along with compatible standard lithography,such an implantation technique shows high potential in future to make structures with nitrogen-vacancy centers for diamond photonics and integrated photonic quantum chip.

关 键 词：CENTERS VACANCY QUANTUM 

分 类 号：O41[理学—理论物理]