Fabrication and Electrical Characteristics of Individual ZnO Submicron-Wire Field-Effect Transistor  

作　　者：JIANG Wei GAO Hong XU Ling-Ling 姜威;高红;徐玲玲(Key Laboratory of Semiconductor Nanocomposite Materials(Ministry of Education),School of Physics and Electronic Engineering,Harbin Normal University,Harbin 150025)

机构地区：[1]Key Laboratory of Semiconductor Nanocomposite Materials(Ministry of Education),School of Physics and Electronic Engineering,Harbin Normal University,Harbin 150025

出　　处：《Chinese Physics Letters》2012年第3期184-186,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 11074060,51172058 and 51102069.

摘　　要：Fabrication and electrical characteristics of individual ZnO submicro-wire field-effect transistors(FETs)are investigated by a simple micro-grid template method.The fabricated back-gate ZnO submicro-wire FET is characterized at room temperature in air.The gate voltage Vgs curves reveal gating effect characteristic of n-type conductivity.The field effect mobility of the ZnO submicro-wire is determined to be 7.9cm^(2)/V_(ds)at V_(ds)=2 V,the capacitance and transconductance are estimated to be about 3.9fF and 15.5nS,respectively.UV sensitive property is measured using a 325-nm laser as the excitation source.Compared to the result carried in darkness,the ZnO submicro-wire FET is sensitive to UV irradiation,which indicates its potential application on UV detectors.Experimental results show that the approach introduced here allows the possibility of fabricating low-cost,reliable and flexible microelectronic devices.

关 键 词：effect TEMPLATE CAPACITANCE 

分 类 号：TN3[电子电信—物理电子学]