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作 者:ZHANG Chao SONG Zhi-Tang WU Guan-Ping LIU Bo WANG Lian-Hong XU Jia LIU Yan WANG Lei YANG Zuo-Ya FENG Song-Lin 张超;宋志棠;吴关平;刘波;王连红;徐佳;刘燕;王蕾;杨佐娅;封松林(State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Micro-System and Information Technology,Chinese Academy of Sciences,Shanghai 200050;United Lab,Semiconductor Manufacturing International Corporation,Shanghai 201203;Graduate University of the Chinese Academy of Sciences,Beijing 100049)
机构地区:[1]State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Micro-System and Information Technology,Chinese Academy of Sciences,Shanghai 200050 [2]United Lab,Semiconductor Manufacturing International Corporation,Shanghai 201203 [3]Graduate University of the Chinese Academy of Sciences,Beijing 100049
出 处:《Chinese Physics Letters》2012年第3期235-238,共4页中国物理快报(英文版)
基 金:Supported by the National Basic Research Program of China(2010CB934300,2011CB309602,2011CB932800);the National Integrated Circuit Research Program of China(2009ZX02023-003);the National Natural Science Foundation of China(60906004,60906003,61076121,61006087);the Science and Technology Council of Shanghai(1052nm07000).
摘 要:An integrated phase change memory cell with dual trench epitaxial diode is successfully integrated in the traditional 0.13μm CMOS technology.By using dual trench isolated structure in the memory cell,it is feasible to employ a Si-diode as a selector for integration in a crossbar structure for high-density phase change memory even at 45 nm technology node and beyond.A cross-point memory selector with a large on/off current ratio is demonstrated,the diode provides nine orders of magnitude isolation between forward and reverse biases in the SET state.A low SET programming current of 0.7mA is achieved and RESET/SET resistance difference of 10000×is obtained.
分 类 号:TN3[电子电信—物理电子学]
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