Chemical Mechanical Polishing of Ge_(2)Sb_(2)Te_(5) Using Abrasive-Free Solutions of Iron Trichloride  

作　　者：YAN Wei-Xia WANG Liang-Yong ZHANG Ze-Fang HE Ao-Dong ZHONG Min LIU Wei-Li WU Liang-Cai SONG Zhi-Tang 闫未霞;王良咏;张泽芳;何敖东;钟旻;刘卫丽;吴良才;宋志棠(State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050

出　　处：《Chinese Physics Letters》2012年第3期243-246,共4页中国物理快报（英文版）

基　　金：Supported by the National Integrate Circuit Research Program of China(2011ZX02704-002,2009ZX02030-001);Science and Technology Council of Shanghai(0952nm00200,10QB1403600);Visiting Professorship for Senior International Scientists of Chinese Academy of Sciences.

摘　　要：Chemical mechanical polishing(CMP)of amorphous Ge_(2)Sb_(2)Te_(5)(GST)is studied using aqueous solutions of iron trichloride(FeCl_(3))as possible abrasive-free slurries.The polishing performance of abrasive-free solutions is compared with abrasive-containing(3wt% colloidal silica)slurry in terms of polishing rate and surface quality.The experimental results indicate that the abrasive-free solutions have a higher polishing rate and better surface quality.In order to further investigate the polishing mechanism,post-CMP GST films using the abrasive-free solutions and abrasive-containing slurry are characterized by x-ray photoelectron spectroscopy.Finally,it is verified that the abrasive-free solutions have no influence on the electrical property of the post-CMP GST films through the resistivity test.

关 键 词：spectroscopy RESISTIVITY verified 

分 类 号：O17[理学—数学]