Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon  

作　　者：LIN Li-Xia CHEN Jia-He WU Peng ZENG Yu-Heng MA Xiang-Yang YANG De-Ren 林丽霞;陈加和;武鹏;曾俞衡;马向阳;杨德仁(State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering,Zhejiang University,Hangzhou 310027;Institut für Angewandte Physik,Technische Universität Dresden,D-01062 Dresden,Germany)

机构地区：[1]State Key Laboratory of Silicon Materials and the Department of Materials Science and Engineering,Zhejiang University,Hangzhou 3100272 Institut für Angewandte Physik,Technische Universität Dresden,D-01062 Dresden,Germany

出　　处：《Chinese Physics Letters》2011年第3期152-155,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50832006 and 60906001;the National Basic Research Program of China under Grant No 2007CB6130403,and the China Postdoctoral Science Foundation.

摘　　要：The formation of a denuded zone(DZ)by conventional furnace annealing(CFA)and rapid thermal annealing(RTA)based denudation processing is investigated and the gettering of copper(Cu)atoms in germanium co-doped heavily phosphorus-doped Czochralski(GHPCZ)silicon wafers is evaluated.It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect(BMD)region could be formed in heavily phosphorus-doped Czochralski(HPCZ)silicon and GHPCZ silicon wafers.This is ascribed to the formation of phosphorus-vacancy(P-V)related complexes and germanium-vacancy(GeV)related complexes.Compared with HPCZ silicon,the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments.These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation,respectively.Furthermore,fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion,except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment,suggesting that germanium doping could improve the gettering of Cu contamination.

关 键 词：CZOCHRALSKI PHOSPHORUS ANNEALING 

分 类 号：TN3[电子电信—物理电子学]