Microwave Absorption Properties of Ni-Foped SiC Powders in the 2-18 GHz Frequency Range  

作　　者：JIN Hai-Bo LI Dan CAO Mao-Sheng DOU Yan-Kun CHEN Tao WEN Bo Simeon Agathopoulos 金海波;李丹;曹茂盛;豆艳坤;陈韬;温博;Simeon Agathopoulos(School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081;Department of Materials Science and Engineering,University of Ioannina,GR-45110 Ioannina,Greece)

机构地区：[1]School of Materials Science and Engineering,Beijing Institute of Technology,Beijing 100081 [2]Department of Materials Science and Engineering,University of Ioannina,GR-45110 Ioannina,Greece

出　　处：《Chinese Physics Letters》2011年第3期207-210,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50672010 and 50972015.

摘　　要：Ni-doped SiC powder with improved dielectric and microwave absorption properties was prepared by selfpropagating high-temperature synthesis(SHS).The XRD analysis of the asynthesized powders suggests that Ni is accommodated in the sites of Si in the lattice of SiC,which shrinks in the presence of Ni.The experimental results show an improvement in the dielectric properties of the Ni-doped SiC powder in the frequency range of 2-18 GHz.The bandwidth of the reflection loss below-10 dB is broadened from 3.04(for pure SiC)to 4.56 GHz(for Ni-doped SiC),as well as the maximum reflection loss of produced powders from 13.34 to 22.57dB,indicating that Ni-doped SiC could be used as an effective microwave absorption material.

关 键 词：MATERIAL POWDERS DIELECTRIC 

分 类 号：TB3[一般工业技术—材料科学与工程]