Hydrogenic-Donor Impurity States in GaAs/Al xGa 1−xAs Quantum Dots in the Presence of an Electric Field  

作　　者：PAN Jiang-Hong LIU Li-Zhe LIU Min 潘江洪;刘力哲;刘敏(College of Physical and Technology,Guangxi Normal University,Guilin 541004)

机构地区：[1]College of Physical and Technology,Guangxi Normal University,Guilin 541004

出　　处：《Chinese Physics Letters》2011年第8期217-220,共4页中国物理快报（英文版）

基　　金：by the National Natural Science Foundation of China under Grant No 10847004.

摘　　要：We report a calculation of binding energy of the ground state of a hydrogenic donor in a quantum cylindrical GaAs dot surrounded by Ga1−xAlxAs with finite confinement potentials,in the presence of a uniform electric field applied parallel to the dot axis.The binding energy increases inchmeal as the radius of the dot decreases until a maximum value for a certain value of the quantum dot radii,then begins to drop quickly.Results for the binding energies and electronic wave function density of the hydrogenic-donor as functions of the impurity position,dot thickness and applied electric field are also presented.

关 键 词：DONOR quantum RADIUS 

分 类 号：O41[理学—理论物理]