Dynamics of Exciton Diffusion in PVK:Phosphorescent Materials/Al Hetero-Structures  

作　　者：YANG Shao-Peng HUANG Da GE Da-Yong LIU Bo-Ya WANG Li-Shun FU Guang-Sheng 杨少鹏;黄达;葛大勇;刘博雅;王利顺;傅广生(Hebei Key Laboratory of Optic-electronic Information Materials,College of Physical Science and Technology,Hebei University,Baoding 071002)

机构地区：[1]Hebei Key Laboratory of Optic-electronic Information Materials,College of Physical Science and Technology,Hebei University,Baoding 071002

出　　处：《Chinese Physics Letters》2011年第8期243-246,共4页中国物理快报（英文版）

基　　金：by the National Natural Science Foundation of China under Grant No 60678006;the Doctoral Foundation of Hebei Province under Grant No 06547002D-4;the Natural Science Foundation of Hebei Province under Grant No E2007000196.

摘　　要：Exciton quenching dynamics in a polymer PVK doped with FirPic,Ir(piq)2(acac)and Ir(ppy)3 phosphorescent guest materials,respectively,due to the presence of metal films is analyzed using time−resolved photoluminescence.The quenching is directly governed by radiationless energy transfer to the metal and is further enhanced by diffusion of excitons into the depletion region of the exciton population at the polymer/metal interface.The influence of polymer layer thickness on the luminescence decay is described by a one-dimensional diffusion model.The energy transfer distance and exciton diffusion length are 10 nm,9 nm,15 nm and 29.3 nm,30.1 nm,30.9 nm for PVK doped with phosphorescent guest materials FirPic,Ir(piq)2(acac)and Ir(ppy)3,respectively.This can disentangle the contributions from direct energy transfer to the metal and exciton migration to the exciton quenching process.The lengths of the exciton quenching region of the three doping systems are 39.3 nm,39.1 nm and 45.9 nm,respectively.

关 键 词：DIFFUSION QUENCHING DIFFUSION 

分 类 号：TN3[电子电信—物理电子学]