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作 者:HAN Kui TANG Ning DUAN Jun-Xi LU Fang-Chao LIU Yu-Chi SHEN Bo ZHOU Wen-Zheng LIN Tie SUN Lei YU Guo-Lin CHU Jun-Hao 韩奎;唐宁;段俊熙;卢芳超;刘禹驰;沈波;周文政;林铁;孙雷;俞国林;褚君浩(State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871;National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083)
机构地区:[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871 [2]National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083
出 处:《Chinese Physics Letters》2011年第8期262-265,共4页中国物理快报(英文版)
基 金:by the National Natural Science Foundation of China under Grant Nos 60806042,10774001 and 60990313;the Research Fund for the Doctoral Program of Higher Education in China(200800011021);the Wuhan National High Magnetic Field Center(WHMFCKF2011004).
摘 要:Low-field magnetotransport properties of two-dimensional electron gases(2DEGs)are investigated in Al_(0.22)Ga_(0.78)N/GaN heterostructures.By means of a tilting magnetic field,unexpected oscillations of magnetoresistivity are observed in a weak localization region.Qualitative understanding based on Altshuler–Aronov–Spivak oscillations is proposed for the case of interface disorder in Al_(0.22)Ga_(0.78)N/GaN heterostructures.
关 键 词:N/Ga RESISTIVITY Electron
分 类 号:TN3[电子电信—物理电子学]
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