Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment  

作　　者：ZHAO Xiang-Fu HAN Ping ZHANG Rong ZHENG You-Dou 赵祥富;韩平;张荣;郑有炓(School of Electronic Science and Engineering,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,National Laboratory of Solid State Microstructure,Nanjing University,Nanjing 210093)

机构地区：[1]School of Electronic Science and Engineering,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,National Laboratory of Solid State Microstructure,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2011年第8期274-276,共3页中国物理快报（英文版）

基　　金：by the National Basic Research Program of China under Grant No 2011CB301900;the National Natural Science Foundation of China under Grant Nos 60990311,60820106003 and 60906025;the Natural Science Foundation of Jiangsu Province(BK2008019);China Scholarship Council(CSC).

摘　　要：After immersion in hydrofluoric acid,the sheet resistance of a 220-nm-thick silicon nanomembrane,measured in dry air by van der Pauw method,drops around two orders of magnitude initially,then increases and reaches the level of a sample with a native oxide surface in about one month.The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement.Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.

关 键 词：RESISTANCE CONDUCTIVITY OXIDATION 

分 类 号：TG1[金属学及工艺—金属学]