A Sampled Grating DBR Laser Monolithically Integrated by Using SOAs with 22mW Output Power and 51 ITU 100 GHz Channels over 43 nm  

作　　者：LIU Yang YE Nan ZHOU Dai-Bing WANG Bao-Jun PAN Jiao-Qing ZHAO Ling-Juan WANG Wei 刘扬;叶楠;周代兵;王宝军;潘教青;赵玲娟;王圩(Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083)

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083

出　　处：《Chinese Physics Letters》2011年第2期126-128,共3页中国物理快报（英文版）

基　　金：Supported by the National High-Tech Research and Development Program of China under Grant NoS 2006AA01Z256,2007AA03Z419 and 2007AA03Z417;the National Basic Research Program of China under Grant Nos 2006CB604901 and 2006CB604902;the National Natural Science Foundation of China under Grant Nos 90401025,60736036,60706009 and 60777021。

摘　　要：A sampled grating distributed Bragg reflector(SG-DBR)laser monolithically integrated with semiconductor optical amplifiers(SOAs),which has a tuning range over 43nm from 1514.05 nm to 1557.4 nm covering 49 continuous and totally 51 ITU 100 GHz standard channels and an output power more than 22 mW for all output wavelengths,is successfully demonstrated.

关 键 词：SOA tuning DBR 

分 类 号：TN2[电子电信—物理电子学]