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作 者:ZHOU Zhi-Feng QIN Fu-Wen ZANG Hai-Rong ZHANG Dong CHEN Wei-Ji ZHI An-Bo LIU Xing-Long YU Bo JIANG Xin 周志峰;秦福文;臧海蓉;张东;陈伟绩;支安博;刘兴隆;于博;姜辛(School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024;Key Laboratory of Materials Modification by Laser,Ion and Electron Beams(Ministry of Education),Dalian University of Technology,Dalian 116024;Institute of Materials Engineering,University of Siegen,Paul-Bonatz-Straße 9-11,D-57076 Siegen,Germany)
机构地区:[1]School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024 [2]Key Laboratory of Materials Modification by Laser,Ion and Electron Beams(Ministry of Education),Dalian University of Technology,Dalian 116024 [3]Institute of Materials Engineering,University of Siegen,Paul-Bonatz-Straße 9-11,D-57076 Siegen,Germany
出 处:《Chinese Physics Letters》2011年第2期220-223,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China under Grant Nos 60976006 and 61040058;the Science and Technology Foundation for Higher Education of Liaoning Province of China.
摘 要:Highly preferred InN Rims are deposited on sapphire(0001)substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD)without using a buffer layer.The structure,surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction,x-ray diffraction,x-ray photoelectron spectroscopy,atomic force microscopy and Hall effect measurement.The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm.The results show that the properties of the Rims are strongly dependent on N2 flux.
关 键 词:measurement SAPPHIRE HIGHLY
分 类 号:TN3[电子电信—物理电子学]
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