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作 者:LIU Xiao-Bing MENG Jian-Wei JIANG An-Quan WANG Jian-Lu 刘骁兵;孟建伟;江安全;王建禄(State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,Shanghai 200433;National Laboratory Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083)
机构地区:[1]State Key Laboratory of ASIC and System,Department of Microelectronics,Fudan University,Shanghai 200433 [2]National Laboratory Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083
出 处:《Chinese Physics Letters》2011年第10期236-239,共4页中国物理快报(英文版)
基 金:Supported by Shanghai Key Program(1052nm07600);the Program for Professor of Special Appointment(Eastern Scholar)at Shanghai Institutions of Higher Learning.
摘 要:The large coercive field of domain switching in poly(vinylidene fluoride-trifluoroethylene)thin films is in much part due to the contribution of nonpolar impurity phases rather than the manifestation of an intrinsic domain switching mechanism of the ferroelectric layer.We coincidentally derive the equivalent electrical capacitance for the total non-ferroelectric capacitive layers from either domain switching current transient or voltage dependence of the switched polarization.Unexpectedly,the non-ferroelectric capacitance reduces by more than 71%with the enhancement of domain switching speed spanning over 5 orders of magnitude in company with the continuous reduction of the remanent polarization,which suggests the thickening of the above capacitive layers with enhanced domain switching speed.
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