The Preparation and Characteristics of In_(x)Ga_(1−x)N(0.06≤x≤0.58)Films Deposited by ECR-PEMOCVD  

作　　者：LIU Xing-Long QIN Fu-Wen BIAN Ji-Ming ZHANG Dong CHEN Wei-Ji ZHOU Zhi-Feng ZHI An-Bo YU Bo WU Ai-Min JIANG Xin 刘兴隆;秦福文;边继明;张东;陈伟绩;周志峰;支安博;于博;吴爱民;姜辛(School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024;Key Laboratory of Materials Modification by Laser,Ion and Electron Beams(Ministry of Education),Dalian University of Technology,Dalian 116024;Institute of Materials Engineering,University of Siegen,Paul-Bonatz-Straße 9-11,D-57076 Siegen,Germany)

机构地区：[1]School of Physics and Optoelectronic Technology,Dalian University of Technology,Dalian 116024 [2]Key Laboratory of Materials Modification by Laser,Ion and Electron Beams(Ministry of Education),Dalian University of Technology,Dalian 116024 [3]Institute of Materials Engineering,University of Siegen,Paul-Bonatz-Straße 9-11,D-57076 Siegen,Germany

出　　处：《Chinese Physics Letters》2011年第10期266-269,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos.61040058 and 60976006;the Science and Technology Foundation for Higher Education of Liaoning Province of China.

摘　　要：We investigate the structural property and surface morphology of In_(x)Ga_(1−x)N films for In compositions ranging from 0.06 to 0.58,which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD).The results of x-ray diffraction(XRD)in InGaN films confirm that they have excellent c−axis orientation.The In content in the InGaN epilayers is checked by electron probe microanalysis(EPMA),which reveals that In fractions determined by XRD are in good agreement with the EPMA results.Atomic force microscopy measurements reveal that the grown films have a surface roughness that varies between 4.16 and 8.14 nm.The results suggest that it is possible to deposit high-c-axis-orientation InGaN films with different In contents.

关 键 词：checked ROUGHNESS 

分 类 号：TN3[电子电信—物理电子学]