ROLE OF ALTER LAYER IN DEPTH PROFILE OF INTERFACE  

作　　者：ZHANG Qiangji LU Ming FEI Lu 张强基;陆明;费璐(Institute of Modern Physics,Fudan University,Shanghai)

机构地区：[1]Institute of Modern Physics,Fudan University,Shanghai

出　　处：《Chinese Physics Letters》1989年第5期209-212,共4页中国物理快报（英文版）

摘　　要：A new model based on the alter layer induced by ion bombardment has been proposed,which can explain the depth profile of interface of Ta_(2)O_(5)/Ta quite well.In contradiction with the generally accepted point of view the depth profile does not follow the shape of the error function.The dominant factor for resolution is the thickness of the alter layer(δ)rather than the electron mean free path(λ).The Ta_(2)O_(5)/Ta sample was prepared by the method of anodic oxidation with thickness of 500A.All the surface analyses were performed by using scanning Auger microprobe(model PHI-590)at room temperature.

关 键 词：temperature. CONTRADICTION MICROPROBE 

分 类 号：TG1[金属学及工艺—金属学]