REGROWTH OF MBE-GaAs FILMS ON Si SUBSTRATES BY HIGH ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING  

作　　者：XIAO Guangming YIN Shiduan ZHANG Jingping FAN Tiwen LIU Jiarui DING Aiju ZHOU Junming ZHU Peiruan 肖光明;殷士端;张敬平;范缇文;刘家瑞;丁爱菊;周均铭;朱沛然(Institute of Semiconductors,Academia Sinica,Beijing;Institute of Physics,Academia Sinica,Beijing)

机构地区：[1]Institute of Semiconductors,Academia Sinica,Beijing [2]Institute of Physics,Academia Sinica,Beijing

出　　处：《Chinese Physics Letters》1989年第10期451-454,共4页中国物理快报（英文版）

摘　　要：4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent rapid thermal annealing.The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.

关 键 词：IMPLANTATION RATE utilized 

分 类 号：TG1[金属学及工艺—金属学]