Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling  

作　　者：CHENG Feng-Feng FA Tao WANG Xin-Qiang YAO Shu-De 成枫锋;法涛;王新强;姚淑德(State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871;State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871)

机构地区：[1]State Key Laboratory of Nuclear Physics and Technology,Peking University,Beijing 100871 [2]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871

出　　处：《Chinese Physics Letters》2012年第2期148-151,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 10875004;the National Basic Research Program of China under Grant No 2010CB832904。

摘　　要：Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-μm-thick InN film grown by molecular beam epitaxy (MBE) are characterized by Rutherford backscattering/channeling (RBS/C) and synchrotron radiation x-ray diffraction (SR-XRD).The minimum yield xmin=2.5% deduced from the RBS/C results indicates a fairly good crystalline quality.From the SR-XRD results,we obtain the values of the screw and edge densities to be ρscrew =7.0027 X 10^(9) and ρedge =8.6115 × 10^(9) cm-2,respectively.The tetragonal distortion of the sample is found to be -0.27 % by angular scans,which is close to the -0.28 % derived by SR-XRD.The value of |e(⊥)/e‖| =0.6742 implies that the InN layer is much stiffer along the a axis than that along the c axis,where e‖ is the parallel elastic strain,and e⊥ is the perpendicular elastic strain.Photoluminescence results reveal a main peak of 0.653eV with the linewidth of 60meV,additional shoulder band could be due to impurities and related defects.

关 键 词：distortion CRYSTALLINE RUTHERFORD 

分 类 号：TN2[电子电信—物理电子学]