Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions  

作　　者：GAO Xi-Li ZHANG Xiao-Zhong WAN Cai-Hua WANG Ji-Min 高熙礼;章晓中;万蔡华;王集敏(Laboratory of Advanced Materials,Department of Materials Science and Engineering,Tsinghua University,Beijing 100084;National Center for Electron Microscopy(Beijing),Tsinghua University,Beijing 100084)

机构地区：[1]Laboratory of Advanced Materials,Department of Materials Science and Engineering,Tsinghua University,Beijing 100084 [2]National Center for Electron Microscopy(Beijing),Tsinghua University,Beijing 100084

出　　处：《Chinese Physics Letters》2012年第2期178-181,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos U0734001 and 11074141;the Ministry of Science and Technology of China under Grant No 2009CB929202.

摘　　要：Nitrogen doped a-C/Silicon (a-C:N/Si) heterojunctions have been fabricated by using the pulsed laser deposition (PLD) technique and their current-voltage characteristics at various temperatures are investigated.For reverse applied voltages,a-C:N/Si heterojunctions exhibit metal-insulator transition characteristics and the transition temperature can be controlled by the applied voltages.After the excitation of repeated high reverse applied voltages,the current-voltage curves show obvious hysteresis behaviors at low temperatures.These hysteresis behaviors are reproducible and the ratio of the high/low resistance can be greater than 104.

关 键 词：HYSTERESIS C:N VOLTAGE 

分 类 号：TN3[电子电信—物理电子学]