Domain Rotation Simulation of the Magnetostriction Jump Effect of 〈110〉 Oriented TbDyFe Crystals  

作　　者：ZHANG Chang-Sheng MA Tian-Yu PAN Xing-Wen YAN Mi 张昌盛;马天宇;潘杏雯;严密(Department of Materials Science and Engineering,and State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027)

机构地区：[1]Department of Materials Science and Engineering,and State Key Laboratory of Silicon Materials,Zhejiang University,Hangzhou 310027

出　　处：《Chinese Physics Letters》2012年第2期193-196,共4页中国物理快报（英文版）

基　　金：Supported by the Foundation for the Author of National Excellent Doctoral Dissertation of China under Grant No 201037;Fundamental Research Funds for the Central Universities under Grant No 2010QNA4004;the National High-Technology Research and Development Program of China under Grant No 2010AA03A402.

摘　　要：The compressive pre-stress induced magnetostriction jump effect of an [(-1) 10] oriented TbDyFe crystal is simulated by tracking the initial redistribution of magnetic domains and their volune fraction evolutions under external magnetic fields.Through searching for the free energy minima within both ((-1) 10) and (110) planes,it is found that the axial compressive pre-stress not only switches magnetizations of the 35° domains toward the perpendicular plane,but also switches magnetizations of the 90° domains approaching the [110] direction.When increasing the stress magnitude,the volume fraction for 35° domains decreases and the one for the [110] domain increases rapidly.However,the volume fraction for the four 90° domains within the perpendicular plane first increases to a maximum under a certain stress magnitude and further decreases.The stress-induced anisotropy thereafter changes the volume fraction evolutions during the magnetization process,which explains well the magnetostriction jump effect.

关 键 词：stress MAGNETIZATION TbDyFe 

分 类 号：TG1[金属学及工艺—金属学]