Effect of N-Doping on Absorption and Luminescence of Anatase TiO_(2) Films  

作　　者：XIANG Xia SHI Xiao-Yan GAO Xiao-Lin JI Fang WANG Ya-Jun LIU Chun-Ming ZU Xiao-Tao 向霞;时晓艳;高晓林;吉方;王亚军;刘春明;祖小涛(Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054;Institute of Mechanical Manufacture Technology,China Academy of Engineering Physics,Mianyang 621900)

机构地区：[1]Department of Applied Physics,University of Electronic Science and Technology of China,Chengdu 610054 [2]Institute of Mechanical Manufacture Technology,China Academy of Engineering Physics,Mianyang 621900

出　　处：《Chinese Physics Letters》2012年第2期204-207,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(10904008);the NSAF Joint Foundation of China(11076008);the Foundation for Young Scholars of University of Electronic Science and Technology of China(L08010401JX0806);the Key Development Foundation of China Academy of Engineering Physics(2009A08002).

摘　　要：Anatase TiO_(2) films are deposited on glass substrates at different oxygen partial pressures of 0.8-1.6 Pa.Room temperature N ion implantation is conducted in the films at ion fluences up to 5 × 10^(17) ions/cm^(2).UV-visible absorption and photoluminescence (PL) are investigated.With the increase of N ion fluences,the band gap of TiO_(2) decreases and the absorbance increases.X-ray photoelectron spectroscopy (XPS) confirms the formation of O-Ti-N nitride after implantation,resulting in the red shift of the band gap.The PL intensity of the deposited films increases with the increasing oxygen partial pressure and decreases remarkably due to the irradiation defects induced by ion implantation.

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分 类 号：F42[经济管理—产业经济]