Raman Scattering Study of In_(x)Ga_(1-x)N Alloys with Low Indium Compositions  

作　　者：TENG Long ZHANG Rong XIE Zi-Li TAO Tao ZHANG Zhao LI Ye-Cao LIU Bin CHEN Peng HAN Ping ZHENG You-Dou 滕龙;张荣;谢自力;陶涛;张曌;李烨操;刘斌;陈鹏;韩平;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Electronic Science and Engineering,Nanjing University,Nanjing 210093)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Department of Electronic Science and Engineering,Nanjing University,Nanjing 210093

出　　处：《Chinese Physics Letters》2012年第2期211-213,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China(2011CB301900);the Natioanal Hi-Tech Research and Develop-ment Program of China(2011AA03A103);the National Natural Science Foundation of China(60990311,60820106003,60906025,60936004);the Natural Science Foundation of Jiangsu Province(BK2011010,BK2010385,BK2010045,BK2010178);the Research Funds from NJU-Yangzhou Institute of Opto-electronics,Fok Ying Tong Education Foundation(122028).

摘　　要：In_(x)Ga_(1-x)N alloys with low indium composition x in the range 0.13 ≤ x ≤ 0.23 are systematically studied mainly based on a Raman scattering technique.Scanning electron microscopy and x-ray diffraction results show that our samples can be divided into two groups:pseudomorphic (0.13 ≤ x ≤ 0.16) and relaxed (0.18 ≤ x ≤ 0.23).The prominent enhancement of A1 longitudinal-optical (LO) mode is found with 325nm laser excitation.For pseudomorphic samples,the frequencies of A1 (LO) phonons agree well with the theoretical predictions,which verifies that the samples are fully strained.For relaxed In_(x)Ga_(1-x)N samples,a linear dependence of the A1 (LO) mode frequency is obtained:Ωo(x) =(740.8 ± 3.3) - (143.1 ± 16.0)x,which is the evidence of one-mode behavior in In_(x)Ga_(1-x)N ternary alloys.Residual strains in these partially relaxed samples are also evaluated.

关 键 词：technique relaxed ALLOYS 

分 类 号：TG1[金属学及工艺—金属学]