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作 者:WANG Xiao-Fei HU Qiu-Bo LI Li-Ben CHEN Qing-Dong WANG Hui-Xian 王晓飞;胡秋波;李立本;陈庆东;王会娴(School of Physics and Engineering,Henan University of Science and Technology,Luoyang 471003;Department of Mathematics and Science,Luoyang Institute of Science and Technology,Luoyang 471023;Luoyang Key Laboratory of Photonic and Electronic Materials,Luoyang 471003)
机构地区:[1]School of Physics and Engineering,Henan University of Science and Technology,Luoyang 471003 [2]Department of Mathematics and Science,Luoyang Institute of Science and Technology,Luoyang 471023 [3]Luoyang Key Laboratory of Photonic and Electronic Materials,Luoyang 471003
出 处:《Chinese Physics Letters》2012年第5期185-188,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China under Grant No 50972056.
摘 要:Strontium titanate films with high a-axis-orientation [a(100) =94.1%] were deposited on (111) Pt/Ti/SiO_(2)/Si substrates by the metal organic deposition process.X-ray diffraction shows that the degree of a-axis orientation increases with increasing annealing temperature.It is found that the dielectric properties are improved by a higher annealing temperature,while the leakage currents are also enhanced,and the possible causes of temperature dependence are discussed.
关 键 词:temperature. process. ANNEALING
分 类 号:TG1[金属学及工艺—金属学]
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