In-Situ SRPES Study on the Band Alignment of (0001)CdS/CdTe Heterojunction  

作　　者：GAO Jun-Ning JIE Wan-Qi YUAN Yan-Yan ZHA Gang-Qiang XU Ling-Yan WU Heng WANG Ya-Bin YU Hui ZHU Jun-Fa 高俊宁;介万奇;袁妍妍;査钢强;徐凌燕;吴恒;王亚彬;于晖;朱俊发(State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072;National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029)

机构地区：[1]State Key Laboratory of Solidification Processing,School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072 [2]National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029

出　　处：《Chinese Physics Letters》2012年第5期201-204,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Nos 50872111,50902113,50902114);the National Basic Research Program of China(No 2011CB610406);the 111 Project of China(No B08040),NPU Foundation for Fundamental Research and the Research Fund of the State Key Laboratory of Solidification Processing(NWPU).

摘　　要：The band alignment of a (0001)CdS/CdTe heterojunction is in situ studied by synchrotron radiation photoemission spectroscopy (SRPES).The heterojunction is formed through stepwise deposition of a CdTe film on a wurtzite (0001)CdS single crystalline substrate via molecular beam epitaxy.CdS shows an upward band bending of 0.55 eV,the valence band offset △Ev is calculated to be 0.65 e V and the conduction band offset △ Ec is 0.31 eV.The interracial band alignment is sketched to display type-Ⅰ band alignment.

关 键 词：ALIGNMENT SKETCH BENDING 

分 类 号：TB3[一般工业技术—材料科学与工程]