Leakage Current Simulation of Insulating Thin Film Irradiated by a Nonpenetrating Electron Beam  

作　　者：ZHANG Hai-Bo LI Wei-Qin CAO Meng 张海波;李维勤;曹猛(Key Laboratory for Physical Electronics and Devices of MOE,Department of Electronic Science and Technology,Xi’an Jiaotong University,Xi’an 710049;School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048)

机构地区：[1]Key Laboratory for Physical Electronics and Devices of MOE,Department of Electronic Science and Technology,Xi’an Jiaotong University,Xi’an 710049 [2]School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048

出　　处：《Chinese Physics Letters》2012年第4期221-224,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11175140;the Fundamental Research Funds for the Central Universities.

摘　　要：We perform numerical simulations of the leakage current characteristics of an insulating thin film of SiO2 negatively charged by a low-energy nonpenetrating focused electron beam.For the formation of leakage current,electrons are demonstrated to turn from diffusion to drift after clearing the minimum potential barrier due to electron-hole separation.In the equilibrium state,the leakage current increases approximately linearly with the increasing primary beam current and energy.It also increases with the increasing film thickness and trap density,and with the decreasing electron mobility,in which the film thickness has a greater influence.Validated by some existing experiments,the simulation results provide a new perspective for the negative charging effects of insulating samples due to the low-energy focused electron beam.

关 键 词：FILM ELECTRON LINEARLY 

分 类 号：O57[理学—粒子物理与原子核物理]