Suppression of the Drift Field in the p-Type Quasineutral Region of a Semiconductor p-n Junction  

作　　者：CAI Xue-Yuan YANG Jian-Hong WEI Ying 蔡雪原;杨建红;魏莹(Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000)

机构地区：[1]Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000

出　　处：《Chinese Physics Letters》2012年第9期151-154,共4页中国物理快报（英文版）

摘　　要：An improved analytical model of the drift field suppressed by the Dember field due to ambipolar diffusion in the p-type quasineutral region(p-QNR)of a forward silicon p–n junction at low injection levels is presented with a good fit to the numerical simulation results.Considering ambipolar transport of both carriers,the diode current in the p-QNR is found to consist of a minority-electron diffusion-current component and majority-hole drift-and diffusion-current components,and the Dember field plays a dominant role in balancing all the components mentioned above to keep the current constant.The analytical model is beneficial to completely understand ambipolar current transport mechanisms in semiconductor p–n junction devices.

关 键 词：NEUTRAL DIFFUSION transport 

分 类 号：TN3[电子电信—物理电子学]