Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template  

作　　者：YU Zhi-Guo CHEN Peng YANG Guo-Feng LIU Bin XIE Zi-Li XIU Xiang-Qian WU Zhen-Long XU Feng XU Zhou HUA Xue-Mei HAN Ping SHI YiZHANG Rong ZHENG You-Dou 于治国;陈鹏;杨国锋;刘斌;谢自立;修向前;吴真龙;徐峰;徐州;华雪梅;韩平;施毅张荣;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093;Nanjing University Institute of Optoelectronics at Yangzhou,Yangzhou 225009)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093 [2]Nanjing University Institute of Optoelectronics at Yangzhou,Yangzhou 225009

出　　处：《Chinese Physics Letters》2012年第9期219-221,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China(2011CB301900);the National Natural Science Foundation of China(61176063,60990311,60820106003,60906025,60936004);The Nature Science Foundation of Jiangsu Province(BK2008019,BK2010385,BK2009255,BK2010178);the Research Funds from NJU-Yangzhou Institute of Optoelectronics.

摘　　要：Roughened surfaces of light-emitting diodes(LEDs)provide substantial improvement in light extraction efficiency.By preparing the self-assemble nanoporous Ni template through rapid annealing of a thin Ni film,followed by a low damage dry etching process,a p-side-up LED with a roughened surface has been fabricated.Compared to a conventional LED with plane surface,the light output of LEDs with nanoporous p-GaN surface increases up to 71%and 36%at applied currents of 1 mA and 20 mA,respectively.Meanwhile,the electrical characteristics are not degraded obviously after surface roughening.

关 键 词：ROUGH PREPARING TEMPLATE 

分 类 号：TN3[电子电信—物理电子学]