High Power Quasi-Continuous-Wave Diode-End-Pumped Nd:YAG Slab Amplifier at 1319 nm  

作　　者：ZHENG Jian-Kui BO Yong XIE Shi-Yong ZUO Jun-Wei WANG Peng-Yuan GUO Ya-Ding LIU Biao-Long PENG Qin-Jun CUI Da-Fu LEI Wen-Qiang XU Zu-Yan 郑建奎;薄勇;谢仕永;左军卫;王鹏远;郭亚丁;刘彪龙;彭钦军;崔大复;雷文强;许祖彦(RCLPT,Key Lab of Functional Crystal and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190;The University of Chinese Academy of Sciences,Beijing 100190)

机构地区：[1]RCLPT,Key Lab of Functional Crystal and Laser Technology,Technical Institute of Physics and Chemistry,Chinese Academy of Sciences,Beijing 100190 [2]The University of Chinese Academy of Sciences,Beijing 100190

出　　处：《Chinese Physics Letters》2013年第7期79-83,共5页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2010CB630706;the National High-Technology Research and Development Program under Grant No 2011AA030202;the National Natural Science Foundation of China under Grant No 50990304.

摘　　要：We report a high power high beam quality quasi-continuous-wave(QCW)diode-end-pumped Nd:YAG slab amplifier at 1319 nm.The strongest 1064 nm parasitic oscillation has been successfully suppressed by reasonable coating design.In a five-pass configuration,the amplifier yields a 42.3 W linearly polarized 1319 nm output at repetition rate of 1 kHz with pulse duration of 75μs and beam quality factors of M^(2)_(x)=1.13 and M^(2)_(y)=2.16 in the orthogonal directions.The fluctuation of the amplifier output power is measured to be±0.6%.Furthermore,a computational model of QCW pulse amplification is employed to examine the amplification process.

关 键 词：ND:YAG AMPLIFIER PUMPED 

分 类 号：TN2[电子电信—物理电子学]