A Polymer-Rich Re-deposition Technique for Non-volatile Etching By-products in Reactive Ion Etching Systems  

作　　者：A.Limcharoen C.Pakpum P.Limsuwan 

机构地区：[1]Department of Physics,Faculty of Science,King Mongkut's University of Technology Thonburi,Bangkok,10140,Thailand [2]Program in Materials Science,Faculty of Science,Maejo University,Chiang Mai,50290,Thailand [3]Thailand Center of Excellence in Physics,CHE,328 Si Ayutthaya Rd.,Bangkok,10400,Thailand

出　　处：《Chinese Physics Letters》2013年第7期127-130,共4页中国物理快报（英文版）

基　　金：Supported by the Industry/University Cooperative Research Center in Data Storage Technology and Applications,King Mongkut’s Institute of Technology Ladkrabang and the National Electronics and Computer Technology Center,the National Science and Technology Development Agency;the Commission of Higher Education under the National Research University(NRU)Project.

摘　　要：Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition technique,used particularly for improving the etched sidewall where the re-deposition is able to accumulate.This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product.The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution.The traditional,additional cleaning process step used to remove the re-deposition material is not required anymore,so this reduces the overall processing time.The technique is demonstrated on an Al_(2)O_(3)-TiC substrate by C4F8 plasma,and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms,suggesting that it is a C–F polymer re-deposition.

关 键 词：REMOVE VOLATILE DEPOSITION 

分 类 号：TN3[电子电信—物理电子学]