Quantum Size and Doping Concentration Effects on the Current-Voltage Characteristics in GaN Resonant Tunneling Diodes  

作　　者：Hassen Dakhlaoui 

机构地区：[1]Department of Physics,College of Science for Girls,Dammam 31113,Saudi Arabia

出　　处：《Chinese Physics Letters》2013年第7期185-188,共4页中国物理快报（英文版）

摘　　要：We theoretically investigate the effects of quantum size and doping concentration on the current-voltage characteristics of GaN resonant tunneling diodes.The results show a marked dependence of the peak current density on the emitter and collector spacers,and the existence of some thickness in the emitter,for which the electric current density reaches its maximum with a large peak-to-valley ratio.We also study the effect of the doping concentration in the emitter and collector layers.It is found that the doping concentration can greatly affect the current-voltage characteristics.In particular,it increases the peak of the current density and displaces the position of the maxima of the current dependence on the applied bias voltage.The effects of aluminum concentration and temperature are also presented.Finally,it is demonstrated that it is possible to have a symmetrical current for applying bias voltage in both directions by adjusting the thickness of the collector spacer.

关 键 词：DOPING TUNNEL QUANTUM 

分 类 号：TN3[电子电信—物理电子学]