Imaging the atomic-scale electronic states induced by a pair of hole dopants in Ca_(2)CuO_(2)Cl_(2) Mott insulator  

莫特绝缘体母体Ca_(2)CuO_(2)Cl_(2)中的掺杂空位对诱导的原子级电子态的直接成像

作　　者：Haiwei Li Shusen Ye Jianfa Zhao Changqing Jin Yayu Wang 李海威;叶树森;赵建发;靳常青;王亚愚(State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China;Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Songshan Lake Materials Laboratory,Dongguan 523808,China;School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China;Frontier Science Center for Quantum Information,Beijing 100084,China)

机构地区：[1]State Key Laboratory of Low Dimensional Quantum Physics,Department of Physics,Tsinghua University,Beijing 100084,China [2]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]Songshan Lake Materials Laboratory,Dongguan 523808,China [4]School of Physical Sciences,University of Chinese Academy of Sciences,Beijing 100049,China [5]Frontier Science Center for Quantum Information,Beijing 100084,China

出　　处：《Science Bulletin》2021年第14期1395-1400,M0003,共7页科学通报（英文版）

基　　金：the National Program on Key Basic Research Project of China(973 Program)(2017YFA0302900);the Basic Science Center Project of the National Natural Science Foundation of China(51788104);supported in part by the Beijing Advanced Innovation Center for Future Chip(ICFC)。

摘　　要：We use scanning tunneling microscopy to visualize the atomic-scale electronic states induced by a pair of hole dopants in Ca_(2)CuO_(2)Cl_(2)parent Mott insulator of cuprates.We find that when the two dopants approach each other,the transfer of spectral weight from high energy Hubbard band to low energy ingap state creates a broad peak and nearly V-shaped gap around the Fermi level.The peak position shows a sudden drop at distance around 4 a_(0)and then remains almost constant.The in-gap states exhibit peculiar spatial distributions depending on the configuration of the two dopants relative to the underlying Cu lattice.These results shed important new lights on the evolution of low energy electronic states when a few holes are doped into parent cuprates.使用扫描隧道显微镜研究了铜氧化物莫特绝缘体母体Ca_(2)CuO_(2)Cl_(2)中由2个空穴型掺杂空位组成的掺杂对所诱导的原子尺度电子态.随着2个掺杂空位的接近,高能的Hubbard能带的谱权重会转移到低能的能隙内电子态,形成一个平缓的峰并且展示出一个在费米能附近的V型能隙.峰的位置会在2个掺杂空位靠近到4倍晶格常数时突然下降并在之后保持不变.能隙内电子态表现出取决于2个掺杂空位相对于底层铜晶格的构型的特殊空间分布.这些结果为在母体铜氧化物中轻度空穴掺杂的低能电子态的演化提供了重要的新线索.

关 键 词：CUPRATES Mott insulator Charge transfer gap Impurity state Scanning tunneling microscopy 

分 类 号：O469[理学—凝聚态物理]