The Structural Modification of LiTaO_(3) Crystal Induced by 100-keV H-ion Implantation  

作　　者：PANG Li-Long WANG Zhi-Guang YAO Cun-Feng ZANG Hang LI Yuan-Fei SUN Jian-Rong SHEN Tie-Long WEI Kong-Fang ZHU Ya-Bin SHENG Yan-Bin CUI Ming-Huan JIN Yun-Fan 庞立龙;王志光;姚存峰;臧航;李远飞;孙建荣;申铁龙;魏孔芳;朱亚滨;盛彦斌;崔明焕;金运范(Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000;Graduate University of Chinese Academy of Sciences,Beijing 100049;Xi’an Jiaotong University,Xi’an 710049)

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000 [2]Graduate University of Chinese Academy of Sciences,Beijing 100049 [3]Xi’an Jiaotong University,Xi’an 710049

出　　处：《Chinese Physics Letters》2012年第6期235-237,共3页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant No 2010CB832902;the National Natural Science Foundation of China(10835010);the Chinese Academy of Sciences.

摘　　要：The effects of 100 keV H-ion implantation on the structure of LiTaO3 crystal are investigated by Raman and UV/VIS/NIR spectroscopies.The implantation fluence is in the range from 1.0 × 10^(13) to 1.0 × 10^(17) H^(+)/cm^(2).The experimental results show the dependence of the crystal structure on ion fluence.It is found that the structural modification of the LiTaO3 crystal is due to two processes.One is H-ions occupying lithium vacancies (VLi),which is predominant at a fluence less than 1.0 × 10^(14) H^(+) /cm^(2).This process causes the reduction of negative charge centers in the crystal and relaxation of distortion in the local lattice structure.The other is the influence of defects created during implantation,which plays a dominant role gradually in the structural modification at a fluence larger than 1.0 × 10^(15) H^(+)/cm^(2).

关 键 词：IMPLANTATION STRUCTURE CRYSTAL 

分 类 号：TG1[金属学及工艺—金属学]