Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors  

作　　者：HUANG Xiao-Ming WU Chen-Fei LU Hai XU Qing-Yu ZHANG Rong ZHENG You-Dou 黄晓明;武辰飞;陆海;徐庆宇;张荣;郑有炓(Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093;Department of Physics,Southeast University,Nanjing 211189)

机构地区：[1]Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,and School of Electronic Science and Engineering,Nanjing University,Nanjing 210093 [2]Department of Physics,Southeast University,Nanjing 211189

出　　处：《Chinese Physics Letters》2012年第6期249-252,共4页中国物理快报（英文版）

基　　金：Supported by the National Basic Research Program of China under Grant Nos 2010CB327504,2011CB922100 and 2011CB301900;the National Natural Science Foundation of China under Grant Nos 60825401,60806026,60936004 and 60990311.

摘　　要：The impact of interfacial trap states on the stability of amorphous indium-gallium-zinc oxide thin film transistors is studied under positive gate bias stress.With increasing stress time,the device exhibits a large positive drift of threshold voltage while maintaining a stable sub-threshold swing and a constant field-effect mobility of channel electrons.The threshold voltage drift is explained by charge trapping at the high-density trap states near the channel/dielectric interface,which is confirmed by photo-excited charge-collection spectroscopy measurement.

关 键 词：charge IMPACT TRAPPING 

分 类 号：TN3[电子电信—物理电子学]