Crystal Growth,Structure,and Spectral Properties of Cr^(4+):Ca_(2)(Al_(1.8)Ga_(0.2))SiO_(7)  

作　　者：WANG Dong-Mei LIU Guo-Jiao LIU Le-Hui YUAN Fei-Fei ZHANG Li-Zhen LIN Zhou-Bin 王东梅;刘国娇;刘乐辉;苑菲菲;张莉珍;林州斌(College of Chemistry and Materials Science,Fujian Normal University,Fuzhou 350007,China;Key Laboratory of Optoelectronic Materials Chemistry and Physics,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China;Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China;State Key Laboratory of Structural Chemistry,Fuzhou 350002,China)

机构地区：[1]College of Chemistry and Materials Science,Fujian Normal University,Fuzhou 350007,China [2]Key Laboratory of Optoelectronic Materials Chemistry and Physics,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China [3]Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China,Fuzhou 350108,China [4]State Key Laboratory of Structural Chemistry,Fuzhou 350002,China

出　　处：《Chinese Journal of Structural Chemistry》2021年第7期919-925,840,共8页结构化学（英文）

基　　金：the National Natural Science Foundation of China(No.61775217)。

摘　　要：A new crystal,Ca_(2)(Al_(1.8)Ga_(0.2))SiO_(7),was obtained by substituting Ga^(3+)ions for some Al^(3+)ions in Ca_(2)Al_(2)SiO_(7)crystal.The growth,structure and optical spectroscopic properties of Cr^(4+)-doped Ca_(2)(Al_(1.8)Ga_(0.2))SiO_(7)were studied.It shows strong absorption at 693 and 762 nm and a broad emission band with peak wavelength at 1223 nm.Both the absorption and emission peaks of Cr^(4+)-doped Ca_(2)(Al_(1.8)Ga_(0.2))SiO_(7)crystal are red-shifted in comparison with that of Cr^(4+)-doped Ca_(2)Al_(2)SiO_(7)crystal due to its weaker lattice field.The investigation results show that there is only one kind of tetrahedral site for Cr^(4+)occupation in the lattice of Ca_(2)(Al_(1.8)Ga_(0.2))SiO_(7)crystal.

关 键 词：crystal structure optical properties crystalline field single crystal growth 

分 类 号：TN244[电子电信—物理电子学] O782[理学—晶体学]