Synthesis and Characterization of a New Quaternary Selenide Ba_(4)Sn_(3)GeSe_(9)Containing[SnGeSe_(5)]^(4-)and[Sn_(2)Se_(4)]^(4-)Units  

作　　者：YUAN Fang-Yu HUANG Yi-Zhi ZHANG Hao ZHOU An-Yi CHENG Wen-Dan LIN Chen-Sheng 袁方宇;黄一枝;张浩;周安宜;程文旦;林晨升(State Key Laboratory of Structural Chemistry,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China;College of Chemistry and Materials Science,Fujian Normal University,Fuzhou 350007,China)

机构地区：[1]State Key Laboratory of Structural Chemistry,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Sciences,Fuzhou 350002,China [2]College of Chemistry and Materials Science,Fujian Normal University,Fuzhou 350007,China

出　　处：《Chinese Journal of Structural Chemistry》2021年第7期962-966,842,共6页结构化学（英文）

基　　金：the National Natural Science Foundation of China(No.21703248);the National Key Research and Development Program of China(No.2017YFA0700103,2018YFA0704502);the Strategic Priority Research Program of the Chinese Academy of Sciences(No.XDB20000000)。

摘　　要：A new quaternary selenide Ba4Sn3GeSe9 was synthesized by high temperature solid state reaction method and fully characterized by elemental analysis,UV-vis spectrum,and single-crystal X-ray diffraction.The title compound crystallizes in the orthorhombic space group Pnma with a=12.463(3),b=9.308(2)and c=17.892(5)Å.Ba_(4)Sn_(3)GeSe_(9)can be characterized by a zero-dimensional compound composed by special[GeSnSe_(5)]4-units,[Sn_(2)Se_(4)]^(4-)units and the adjacent cations Ba^(2+)ions.The[GeSnSe_(5)]^(4-)unit is composed of a SnSe3 trigonal pyramid formed by divalent Sn2+and edge-sharing with a GeSe4 tetrahedron,and the[Sn_(2)Se_(4)]^(4-) unit is composed of two SnSe3 trigonal pyramids.Ba_(4)Sn_(3)GeSe_(9)is an indirect semiconductor with a band gap of 1.21 eV.

关 键 词：quaternary selenide zero-dimensional structure [GeSnSe_(5)]^(4-)unit indirect band gap 

分 类 号：TQ125.2[化学工程—无机化工]