Low Bias Negative Differential Resistance with Large Peak-to-Valley Ratio in a BDC60 Junction  

作　　者：REN Hua LIANG Wei ZHAO Peng LIU De-Sheng 任华;梁伟;赵朋;刘德胜(School of Physics and Technology,University of Jinan,Jinan 250022;School of Physics,Shandong University,Jinan 250100;Department of Physics,Jining University,Qufu 273155)

机构地区：[1]School of Physics and Technology,University of Jinan,Jinan 250022 [2]School of Physics,Shandong University,Jinan 250100 [3]Department of Physics,Jining University,Qufu 273155

出　　处：《Chinese Physics Letters》2012年第7期218-220,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 11104115;the Natural Science Foundation of Shandong Province under Grant No ZR2009AL004;the Doctoral Foundation of University of Jinan under Grant No XBS1004;the Key Laboratory of Semiconductor Materials Science Program of Institute of Semiconductors of Beijing under Grant No KLSMS-0908.

摘　　要：Based on nonequilibrium Green's function method and density functional theory calculations,we investigate theoretically the electronic transport properties of 1,4-bis(fullero[c]pyrrolidinl-yl)benzene (BDC60).A low bias negative differential resistance with the peak-to-valley ratio as high as 305.41 is obtained.The observed negative differential resistance is explained in terms of the evolution of the transmission spectra,molecular projected self-consistent Hamiltonian states and molecular projected energy levels with applied bias.

关 键 词：projected HAMILTONIAN NONEQUILIBRIUM 

分 类 号：O17[理学—数学]